SSRF4N60 4a , 600 v , r ds(on) 2.4 ? n-channel enhancement mode power mosfet elektronische bauelemente 5-jul-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a m j k l l g f b n d e c h rohs compliant product a suffix of -c specifies halogen and lead-free description the n-channel mosfet is used an advanced termin ation scheme to provide enhanced voltage-blocking capabil ity without degrading performance over time. this advanced tech nology has been especially tailored to minimize on-state resis tance, provide superior switching performance. this device is well suited for high efficiency switched mode power suppliers, active po wer factor correction, electronic lamp ballasts based half bri dge topology. features robust high voltage termination avalanche energy specified diode is characterized for use in bridge circuits source to drain diode recovery time comparable to a discrete fast recovery diode. absolute maximum ratings( t c =25c unless otherwise specified ) parameter symbol ratings unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v continuous drain current i d 4.0 a pulsed drain current i dm 16 a power dissipation 2 p d 33 w derating factor above 25c 0.26 w / c single pulsed avalanche energy 1 e as 330 mj repetitive avalanche energy 2 e ar 7.3 mj operating junction and storage temperature range t j , t stg 150,-55~150 c thermal resistance rating maximum junction to ambient r ja 62.5 c / w maximum junction to case r jc 3.79 notes: 1. l=30mh, i as =4.4a, v dd =85v, r g =25 , starting t j =25c 2. repetitive rating: pulse width limited by maxim um junction temperature ito - 220 ref. millimeter ref. millimeter min. max. min. max. a 14.60 15.7 0 h 2.70 3.80 b 9.50 10.50 j 0.90 1.50 c 12.60 14.0 0 k 0.50 0.90 d 4.30 4.70 l 2.34 2.74 e 2.3 0 3.2 m 2.4 0 3.0 0 f 2.3 0 2.80 n 3.0 3.4 g 0.30 0.70 1 gate 3 source 2 drain
SSRF4N60 4a , 600 v , r ds(on) 2.4 ? n-channel enhancement mode power mosfet elektronische bauelemente 5-jul-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-threshold voltage v gs(th) 2.0 - 4.0 v v ds =v gs , i d =250 a drain-source on-resistance r ds(on) - 2.0 2.4 v gs =10v, i d =2a drain-sounce breakdown voltage bv dss 600 - - v v gs =0, i d =250 a zero gate voltage drain current i dss - - 10 a v ds =600v, v gs =0 gate-body leakage current, forward i gssf - - 100 na v gs =30v, v ds =0 gate-body leakage current, reverse i gssr - - -100 na v gs = -30v, v ds =0 dynamic total gate charge 1.2 q g - 19.8 - nc v ds =480v, i d =4.4a, v gs =10v gate-source charge 1.2 q gs - 4 - gate-drain charge 1.2 q gd - 7.2 - turn-on delay time 1.2 t d(on) - 27 - ns v dd =300v, i d =4.4a, r g =25 rise time 1.2 t r - 19 - turn-off delay time 1.2 t d(off) - 160 - fall time 1.2 t f - 22 - input capacitance c iss - 672 - pf v ds =25v, v gs =0, f =1.0mhz output capacitance c oss - 66 - reverse transfer capacitance c rss - 4.7 - maximum continuous drain-source diode forward current i s - - 4.0 a maximum pulsed drain-source diode forward current i sm - - 16 a drain-source diode forward voltage v sd - - 1.4 v v gs =0, i s =4.0a reverse recovery time t rr - 300 - ns v gs =0, i s =4.0a, i f / dt =100a/ s reverse recovery charge 1 q rr - 2.2 - c notes: 1. pulse test: pulse width < 300us, duty cycle 2%. 2. basically not affected by working temperature.
SSRF4N60 4a , 600 v , r ds(on) 2.4 ? n-channel enhancement mode power mosfet elektronische bauelemente 5-jul-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
SSRF4N60 4a , 600 v , r ds(on) 2.4 ? n-channel enhancement mode power mosfet elektronische bauelemente 5-jul-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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